Effects of plasma pretreatment on silver sputtering film deposited on PP nonwovens 等离子体预处理对丙纶基材溅射银薄膜的影响
ZnO thin films with c-axis orientation prepared on the room temperature substrate by the ECR multipolar plasma sputtering method 用ECR多极场等离子体在室温基片上制备的具有C轴取向的ZnO薄膜
For example, DLC films can be deposited on magnetic disks by way of plasma magnetic sputtering, filtered cathodic vacuum arc or plasma enhanced chemical vapor. 对类金刚石磁盘保护膜,可以使用等离子体磁控溅射沉积、磁过滤阴极弧沉积、等离子体化学气相沉积来制备;
Au/ SiO-2 nano-composite multilayer thin films were prepared by magnetron plasma sputtering. 用多靶磁控溅射技术制备了Au/SiO2纳米多层薄膜。
Structures and Properties of Zr-N Films Prepared by ECR-Microwave Plasma Enhanced Sputtering 微波-ECR等离子体辅助沉积Zr-N薄膜结构和性能研究
Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias. 采用四极质谱仪测量了试验参数对高压脉冲增强射频磁控溅射PTFE靶等离子体气氛的影响规律。
Study of SnO_2 Thin Film Gas Sensors from Plasma Reactive Sputtering 等离子体反应溅射生成SnO2气体传感器薄膜的研究
Nano& sized metal films deposited by ECR plasma sputtering method ECR等离子体溅射法制备纳米金属薄膜
Study on Low Viscosity Measure by Plasma Sputtering Thin Film TiN on Quartz Crystal 等离子体溅射石英晶体表面成膜实现液体黏度测量的研究
This paper reviewed the preparation and properties of ZnO thin films using ECR plasma sputtering method. 本文叙述应用微波ECR等离子体溅射法沉积ZnO膜的制法及其性能。
Study of AIN Film by ECR Microwave Plasma Sputtering Deposition ECR微波等离子体溅射沉积氮化铝的研究
The configuration and working principle of microwave electron cyclotron resonance ( ECR) plasma source enhanced unbalance magnetron sputtering equipment was introduced, and the process of preparation of diamond-like carbon ( DLC) by this equipment was described. 介绍了微波ECR等离子体源增强非平衡磁控溅射设备的结构和工作原理,详细叙述了利用该设备制备类金刚石膜的过程。
Plasma Extraction in Magnetron Sputtering with Open Confining Magnetic Field 有开放约束磁场磁控溅射系统等离子体引出
In this paper, we prepare the SiCN thin films by twined charge chamber microwave ECR plasma enhanced unbalanced magnetron sputtering system, and study the bonds structure and properties of the film. 本文利用双放电腔微波-ECR等离子体增强非平衡磁控溅射系统制备了SiCN薄膜,并系统地研究了薄膜的结构和性能。
Growth of TiN by Plasma Glow Discharge Sputtering, Diffusion and Ion Surface Alloying 等离子体辉光溅射反应复合渗镀合成TiN的研究
Recently, the microwave electron-cyclotron-resonance ( ECR) plasma sputtering method has been employed to deposite ZnO thin film, which possesses some advantages of high performance, high depositing rate and low substrate temperature. 最近,应用微波电子回旋共振(ECR)等离子体溅射法沉积成高性能、高沉积速率和低基片温度的ZnO薄膜。
We have deposited SiNx films in Twinned Microware Electron Cyclotron Resonance ( MW-ECR) Plasma Enhanced Unbalance Magnetron Sputtering ( PEUMS), and studied the structure and properties of films. 本文采用微波ECR等离子体增强非平衡磁控反应溅射法制备了SiNX薄膜,系统的研究了SiNX薄膜的结构和性能。
SrTiO_3 ( STO) films were prepared under the condition of room temperature by the mirror_ confinement_type electron cyclotron resonance ( MCECR) plasma sputtering. 在室温条件下,用封闭式电子回旋共振(MCECR)等离子体溅射方法沉积了SrTiO3(STO)膜。
The structural study of Ti films deposited by microwave ECR plasma sputtering method 微波ECR等离子体溅射沉积Tt薄膜的结构研究
The plasma can be 4 generated by hot-cathode discharge or RF discharge of gas. In addition, the device has four metal plasma sources, two magnetron sputtering targets, cold and hot target supports. 真空室内的气体等离子体可由热灯丝或射频放电产生,4另外还配置了4个金属等离子体源、两套磁控溅射靶和冷却靶台。
Zinc Oxide Thin Films Prepared Using Microwave ECR Plasma Sputtering Method 微波ECR等离子体溅射法沉积ZnO薄膜
Al_2O_3 films of RF plasma enhanced magnetron sputtering deposition 射频等离子体增强磁控溅射沉积Al2O3膜
Strong coincidence of theory with experiment was achieved with plasma ion assisted deposition ( PIAD) and plasma assisted reactive magnetron sputtering ( PARMS). 所有这些膜系都是在PIAD(等离子辅助沉积)和PARMS(等离子体辅助反应磁控溅射)的方式下完成的。
Preparation and characterization of DLC films by microwave ECR plasma source enhanced unbalance magnetron sputtering 微波ECR等离子体源增强非平衡磁控溅射DLC膜的制备与表征
Study of Cu film deposited by high density plasma enhanced nonequilibrium magnetron sputtering 高密度等离子体增强非平衡磁控溅射沉积Cu膜研究
MW-ECR Plasma Enhanced Unbalance Magnetron Sputtering and Carbon Nitride Films Preparation Study of the Magnetron Design 微波-ECR等离子体增强非平衡磁控溅射技术及CN薄膜的制备研究磁控管总体设计的探讨
The magnetic field not only affects the discharge characteristics, plasma distribution and cathode sputtering target of the etching rate, but also seriously restricted the target life, target utilization and at the same time affect the stability of the experiment and repeatability during sputtering. 指出了磁场不仅影响着溅射时放电特性、等离子体分布、溅射速率和阴极靶材的刻蚀,而且严重制约了靶的使用寿命和靶材的利用率,同时也影响了实验的稳定性和重复性。
In order to overcome the target surface ignition in the DC reactive sputtering, in recent years puts forward a new pulse power supply for the plasma splash that AC sputtering power supply. 为了克服直流溅射中的靶面拉弧问题,近年来提出了新型的用于等离子体喷溅的脉冲电源,即交流溅射电源。
The preparations of one dimensional ZnO nanowires and two dimensional ZnO quantum wells have been achieved by thermally evaporating and helicon wave plasma assistance radio frequency sputtering techniques, separately. 本工作分别采用热蒸发技术和螺旋波等离子体辅助射频溅射技术研究了一维ZnO纳米线和二维ZnO量子阱结构的制备过程。